Cyclopentadienyhafnium tris(dimethylamide) CpHf(NMe2)3 (and in comparison bis(methylcyclopentadienyl)methylhafnium methoxide (CpMe)2Hf(OMe)Me ), in combination with O3 as oxygen source, have been applied as precursors for the ALD growth of high-quality dense dielectric insulating HfO2 films on semiconductor or metallic substrates
CpHf(NMe2)3 was also applied for the growth of Y2O3-doped HfO2 (to enhance the ability of metastable cubic/tetragonal HfO2 phase to withstand post-deposition annealing procedures without transformation to lower-permittivity monoclinic phase (what will be a problem when fabricating high-density capacitors). High conformality (step-coverage) on three-dimensional substrates has been achieved.[[i]]
[i] Tamm, Aile, URI: http://hdl.handle.net/10062/15838, Date: 2010-10-26, « Atomic layer deposition of high-permittivity insulators from cyclopentadienyl-based precursors »