ALUMINUM AMINOALKOXIDES
Al-Hf aminoalkoxides
Al2Hf(OPri)8(dmae)2 (dmae = N,N-dimethylaminoethoxide)
Al2Hf(OPri)8(dmap)2 (dmap = dimethylaminopropoxide)
Heterometallic A-Hf aminoalkoxides Al2Hf(OPri)8(dmae)2 (dmae = N,N-dimethylaminoethoxide) (2) and Al2Hf(OPri)8(dmap)2 (dmap = dimethylaminopropoxide) (3) were synthesized by the alcohol exchange reactions using HfAl2(OPri)10 and corresponding aminoalcohols. Al2Hf(OPri)8(dmae)2 and Al2Hf(OPri)8(dmap)2 were characterized by elemental analysis, 1H NMR, FT-IR, mass spectrometry and TGA. The molecular structure of 2 is Al2Hf(μ-OPri)2(μ,η2-OC2H4NMe2)2(OPri)6, as was established by single-crystal X-ray diffraction, and is based on an open-shell trinuclear unit with a central 6-coordinate Hf atom and 5-coordinate Al centres.
Al2Hf(OPri)8(dmae)2 was tested as a single-source precursor for the deposition of HfAlOx films by liquid-injection MOCVD on sapphire and silicon substrates at 500–800 °C.
The as-deposited HfAlOx layers were amorphous; their annealing at 900 °C/ 1h induced partial crystallization. The variation deposition temperature was studied as factor influencing layer growth rate, composition and morphology. The bulk of the HfAlOx films
grown using Al2Hf(OPri)8(dmae)2 was Al-rich (Al/Hf = 1.2–1.6) and contained small amounts of C (2–4%) and N (4–5%) impurities. [[i]]
[i] L.G. Hubert-Pfalzgraf, A. Abrutis, S. Pasko, N. Touati, D. Luneau, Polyhedron, 2006, vol.25, Iss.2, p.293-299, « Synthesis and characterization of Hf–Al heterometallic aminoalkoxides as single-source MOCVD precursors for hafnium aluminate films. », https://www.sciencedirect.com/science/article/pii/S027753870500447X
Al2Hf(OPri)8(dmae)2 for HfAlOx by liquid injection MOCVD
Fig. Molecular structure of Al2Hf(OiPr)8(dmae)2 and ist application for the growth of Hf-Al-O films by liquid injection MOCVD
Al2Hf(OPri)8(dmae)2 was tested as a single-source precursor for the deposition of HfAlOx (or (HfO2)x(Al2O3)1-x films) by liquid-injection MOCVD on sapphire and silicon substrates
at 500–800 °C. The deposited HfAlOx layers were characterized by XRD, AFM and XPS. The as-deposited HfAlOx layers were amorphous; their annealing at 900 °C/ 1h induced partial crystallization. The variation deposition temperature was studied
as factor influencing layer growth rate, composition and morphology. The bulk of the HfAlOx films grown using Al2Hf(OPri)8(dmae)2 was Al-rich (Al/Hf = 1.2–1.6) and contained
small amounts of C (2–4%) and N (4–5%) impurities.[i]
[i] L.G. Hubert-Pfalzgraf, A. Abrutis, S. Pasko, N. Touati, D. Luneau, Polyhedron, 2006, vol.25, Iss.2, p.293-299, « Synthesis and characterization of Hf–Al heterometallic aminoalkoxides as single-source MOCVD precursors for hafnium aluminate films. », https://www.sciencedirect.com/science/article/pii/S027753870500447X
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