Tetramethylcyclopentadienylsilane SiH3-C5HMe (and for comparison Si2H5-C5Me5), was applied as Si source for
the deposition of W/Si multilayers (with W(CO)6 as W precursor), with 14 x 24nm double layers on Si [100] substrates by hot-filament metal organic chemical vapor deposition (MOCVD). The resulting multilayers thickness and growth rate were determined by in-situ
XRF measurements; the W/Si structures were characterized XTEM and sputter AES. The fragmentation of the silicon precursor SiH3-C5HMe (and for comparison Si2H5-C5Me5) was studied by mass spectroscopy.[i]
[i] N. Auner, J. Weis, F. Hamelmann, G. Haindl, J. Hartwich, U. Kleineberg, U. Heinzmann, A. Klipp, S.H.A. Petri, P. Jutzi, Organosilicon Chemistry Set: From Molecules to Materials, 2008, Chapter 122, « In-Situ Controlled Deposition of Thin Silicon Films by Hot-Filament MOCVD with (C5Me5)Si2H5 and (C5Me4H)SiH3 as Silicon Precursors », DOI: 10.1002/9783527620777.ch122c
Pentamethylcyclopentadienyldisilane (Si2H5-Me5C5) ws applied for the deposition of SiO2 layers, using O2 remote plasma CVD process. [i]
[i]F Hamelmann, G Haindl, J Schmalhorst, A Aschentrup, E Majkova, U Kleineberg, U Heinzmann, A Klipp, P Jutzi, A Anopchenko, M Jergelc, S Lubyc, Thin Solid Films,Vol. 358, 2000, Iss. 1–2, p. 90–93, Metal oxide/silicon oxide multilayer with smooth interfaces produced by in situ controlled plasma-enhanced MOCVD