Tellurium bis (N-trimethylsilylamide) Te[NH(SiMe3]2 synthesis:
Tellurium dichloride TeC12 and trimethylsilylamine
Me3Si-NH2 (in molar ratio 1:1) were mixed in THF, the mixture was heated at 150° C for 8 hours. After evaporation at ambient temperature in a vacuum, the synthesized Te precursor was purified by fractional distillation at 60° C/ 0.1 torr . The obtained
pure Te[NH(SiMe3]2 was characterized by 1H NMR and 13C NMR spectroscopy (in C6D6 solvent, at 25° C.) [[i]]
[i] Jung-hyun Lee, Yoon-Ho Khang , US Patent US7728172B2 , 2005-02-14
Tellurium bis (N-trimethylsilylamide) Te[NH(SiMe3]2 was applied as precursor for then growth of GST thin films by ALD (in combination with GeMe4 or Ge[NMe2]4 as Ge source and SbMe3 or Sb[NMe2]3 as Sb source) on Si substrate contanining multiple concave parts having a depth of 1800nm and a width of 96 nm. The Te/(Ge+Sb) ratios 1.1,.25, and 1.45 were used. Other growth conditions were following: 250°C deposition temperature, 250 ALD growth cycles, Ar carrier flow 500sccm , H2 flow 300sccm, plasma power 100W. GST layers doped with a 15-group compound (for example, N) and/or a 14-group compound (for example, Si) were grown; the resistance of the doped GST thin layers was measured, it was found that the resistance of both N- and Si-doped GST layers decreased as Te/(Ge+Sb) ratio increased.