Yttrium(III) tris(N,N’-diisopropyl-2-dimethylamidoguanidinate) [Y(DPDMG)3] was synthesized and characterized as alternative novel precursor MOCVD deposition of yttrium oxide thin films. The complex molecular structure is monomeric, as revealed by single crystal XRD, NMR and electron impact mass spectrometry (EI-MS). [Y(DPDMG)3] is volatile and very stable under evaporation conditions, as determined by the thermal analysis.
[Y(DPDMG)3] was evaluated as precursor for the growth of Y2O3 thin films by MOCVD. Uniform reproducible quality Y2O3 layers were deposited on Si(100) substrates
by MOCVD using [Y(DPDMG)3] guanidinate precursor and O2 at 350–700 °C temperature. The investigation of the layer structural, morphological, compositional and electrical properties was performed. [Y(DPDMG)3] proved to be good MOCVD precursor for
the preparation of the stoichiometric Y2O3 thin films having suitable electrical properties for their potential use as high-k materials.[[i]]
[i] A.P. Milanov, K. Xu, S. Cwik, H. Parala, T. de los Arcos, H.-W. Becker, D. Rogalla, R. Cross, Sh. Paul, A. Devi , Dalton Trans., 2012,41, 13936-13947, DOI: 10.1039/C2DT31219K, «Sc2O3, Er2O3, and Y2O3 thin films by MOCVD from volatile guanidinate class of rare-earth precursors», https://pubs.rsc.org/en/content/articlelanding/2012/dt/c2dt31219k/unauth#!div