Chromium bis(2,4-dimethyl-1,3-pentadienyl) Cr(C7H11)2
Chromium bis(2,4-dimethyl-1,3-pentadienyl) Cr(C7H11)2 has been applied for the pyrolytic deposition (CVD) of Cr-containing layers on silicon (111) at substrate temperatures 441-534°C. The source evaporation temperature was maintained at 50°C. SEM and XRD analysis revealed that the film consisted of polycrysrtaline Cr3C2 and Cr2O3 having some preferred orientation. Annealing of the film at 650°C/12h and 850°C/7h resulted in more random orientation of Cr3C2, no change in Cr2O3 orientation was observed. [946]