Manganese pentacarbonyl [Mn(CO)5]2

Experimental vapor pressure data of Mn(CO)5 vs temperatture (351 K < T < 428 K),

Vapor pressure of [Mn(CO)5]2 has been assessed, and its temperature dependence was investigated [[i]]

[i] Raja Chellappa , Dhanesh Chandra, The Journal of Chemical Thermodynamics, Volume 37, Issue 4, April 2005, Pages 377–387, http://dx.doi.org/10.1016/j.jct.2004.10.002, Assessment of vapor pressure data of solid metal carbonyls 

[Mn(CO)5]2 for Mn-doped AlN by MOCVD

Dimanganese decacarbonyl [Mn(CO)5]2 has been applied as dopant for the  A1N films  grown on silicon Si(100) substrates by MOCVD (using NH3 and AlMe3 sources, in V/III ratio 2.5:1). ([Mn(CO)5]2 was introduced into the flow reactor via a pulse valve. The Si(100) substrates were flash annealed >1200 °C to remove the surface oxide coating, and then  kept at a constant temperature ~860 °C, the growth pressure was 10-5 Torr range. The deposited Mn-doped AlN films were characterized by IR reflectance microscopy, SEM imaging, XRF, XRD, CL, and SIMS. Due to the relatively fast growth rates (3-5 µm/h), multiple nucleation centers produced that lead to a very rough surface; film thickness ranged from 2 µm to 27 µm. The incorporation of manganese (<0.1% Mn) was deponstrated by light emission during electron bombardment (cathodoluminescence). The CL spectrum at RT has shown few emission bands : a slight shoulder at 23419 cm'1 (427 nm), followed by green band at 20491 cm"1 (488 nm), and a red band at 16667 cm"1 (600 nm). The red band possessed multiple phonon states, described by Karel and coworkers [7]. These transitions have been shown to originate from Mn4+ ions in a tetrahedral field [7], but only the emission from the red band has been observed previously. The blue and green transitions were observed only in the excitation spectrum. [[i] ]

[i]RC Tucceri, CD Bland, ML Caldwell,  Mat. Res. Soc. Symp. Proc. Vol. 572 ° 1999 Materials Research Society, p.413-418, “SIMS and CL Characterization of Manganese-Doped Aluminum Nitride Films”, http://www.dtic.mil/cgi-bin/GetTRDoc?AD=ADA369923#page=416

Mat. Res. Soc. Symp. Proc. Vol. 572 ° 1999 Materials Research Society, p.413-418 

      Mn-doped AlN films (~2µ) were grown using dimanganese decacarbonyl [Mn(CO)5]2 dopant introduced in pulsed mode (100 ms on, 100 ms off) on the top of the AlN films grown on Si(100) by MOCVD (at the same growth temperature and pressure as the AlN underlayer). The AlN underlayer (~16 µm) was grown at 615°C and pressure 10−4 Torr. The grown film was characterized by cathodoluminescence, as well as IR reflectance microscopy, XRD, XRF and SEM. Cathodoluminescence measurements demonstrated strong visible emitted light from incorporated manganese, however the relative Mn/Al ratio was below the detection limit (0.01 % Mn) of the X-Ray fluorescence spectroscopy. [[i]]

 [i] M.L. Caldwell, H.H. Richardson and M.E. Kordesch, “Optical Properties of Manganese Doped Amorphous and Crystalline Aluminum Nitride Films”, MRS Proceedings / Vol. 595 / 1999, DOI: http://dx.doi.org/10.1557/PROC-595-F99W3.26, http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8233796

[Mn(CO)5]2 for MnOx nanoparticles by MOCVD

Manganese(0) carbonyl [Mn(CO)5]2 was applied as precursor for the growth of manganese oxide nanoparticles by a CVD process; the growth temperature of the materials is varied from 500 to 1500 °C (at 200 °C intervals). The prepared MnOx nanoparticles are characterized by XRD,TEM), Brunauer-Emmett-Teller (BET) surface area measurements, and XPS. According to XRD, manganese oxide nanoparticles synthesized at 500, 700 – 1100, 1300, and 1500 °C were mainly MnO2, Mn2O3, Mn2O3/Mn3O4, and Mn3O4, respectively. The TEM and BET measurements confirmed particle size on the nanometer scale with a large specific surface area (SSA) of 81 – 215 m2 g−1. XPS indicated the catalysts to have manganese oxidation states of (2+), (3+), or (4+) depending on the synthesis temperature. [[i]]

[i] Hoang Anh Le, Sungmin Chin, Eunseuk Park, Le Thuy Linh, Gwi-Nam Bae, Jongsoo Jurng , Chemical Vapor Deposition, Volume 17, Issue 7-9, pages 228–234, September, 2011 , “Chemical Vapor Synthesis and Characterization of Manganese Oxides”, http://onlinelibrary.wiley.com/doi/10.1002/cvde.201106914/abstract?deniedAccessCustomisedMessage=&userIsAuthenticated=false 

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