Trifluoromethylcobalt tricarbonyl Co(CF3)(CO)4 was tested as MOCVD precursor of metallic cobalt Co and cobalt silicide CoSix layers (the latter in combination with SiH4 and Si2H6 as Si sources). Strongly textured (111)-β Co layers were grown on Si substrates at temperatures >300°C in H2 at atmospheric pressure. However, in case of cobalt silicide growth no contamination free CoSix films could be grown with CoCF3(CO)4 as precursor.[[i]]
[i] G.J.M. Dormans, G.J.B.M. Meekes, E.G.J. Staring, Journal of Crystal Growth, Volume 114, Issue 3, November 1991, Pages 364-372, « OMCVD of cobalt and cobalt silicide »