Dysprosium tris(acetylacetonate) Dy(acac)3 was synthesised and characterised. According to the TG curve in isothermal mode, some moss loss was observed for [Dy(acac)3] at ~117°C.
Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)dysprosium (III) [Dy(thd)3]x has been applied as precursor for the growth of Dy2O3 films by MOCVD on stainless steel
and quartz substrates ; the precursor evaporation conditions were 180-185°C/ 6 mbar. The deposited Dy2O3 layers were characterised by SEM, XRD, AES, SIMS and XPS; layer thickness was determined by the accurate weighing and profilometry after laser impact.
The effect of oxidation at gigh temperature on the deposited Dy2O3 films grown on stainless steel was studied (both in isothermal and cyclic conditions).[i]
[i] G. Bonnet, M. Lachkar, J.C. Colson, J.P. Larpin, Thin Solid Films, 1995, Vol. 261, Iss. 1–2, 1995, p. 31-36, « Characterization of thin solid films of rare earth oxides formed by the metallo-organic chemical vapour deposition technique, for high temperature corrosion applications »
[i] J. Päiväsaari, M. Putkonen, T. Sajavaara, L. Niinistö, Thin Solid Films, 2005, 472, 275.
[ii] J. Niinistö, P. Myllymäki, Ch. Dezelah, Ch.H. Winter, M. Putkonen, M. Nieminen, L. Niinistö, J. Päiväsaari Rare Earth Oxide Thin Films, Topics in Applied Physics, 2007, Vol. 106/2007, p.15-32, DOI: 10.1007/11499893_2 , “Atomic Layer Deposition of Rare Earth Oxides”
[i] A. Lamperti, E. Cianci, U. Russo, S. Spiga, O. Salicio, G. Congedo, M. Fanciulli, J. Vac. Sci. Technol. B 29, 01AE03 (2011); http://dx.doi.org/10.1116/1.3534024 (9 p.), « Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack »
[ii] P. Myllymäki, M. Roeckerath, J. Marcelo Lopes, J. Schubert, K. Mizohata, M. Putkonen, L. Niinistö, J. Mater. Chem., 2010, 20, 4207-4212, DOI: 10.1039/C0JM00363H, « Rare earth scandate thin films by atomic layer deposition: effect of the rare earth cation size »
Dy(thd)3 , combined with Fe(acac)3 , BiPh3 and Ga(acac)3 as Fe, Bi and Ga sources, was applied as Dy precursor for the plasma-activated chemical vapor deposition (PACVD) deposition of polycrystalline B,Ga-substituted Dy-Fe garnet thin layers on glass substrates, which was followed
by annealing at 670°C. The was used to achieve The evaporation and transport of Dy(thd)3 as well as other low-vapor-pressure powdered precursors to a plasma reactor was achieved by the single mixed precursor approach. Low surface roughness of ~2 nm and
square Faraday hysteresis loop behaviour with a rotation of ~2 deg/μm at 633 nm wavelength was observed for the deposited Bi, Ga-substituted Dy, Fe garnet layers, which are quite favourable characteristics for high-density magneto-optical data storage . [[i]]
[i] Anoikin, E.V.; Sides, P.J.;, IEEE Trans. Magnetics, 1995, Vol.: 31 Iss.:6, p. 3239 – 3241, Plasma-activated chemical vapor deposition of bismuth-substituted iron garnets for magneto-optical data storage
Dy(thd)3 was used as the precursor for the growth of epitaxial DyMnO3 films on YSZ(111) (ZrO2(Y2O3) ) substrates by liquid injection MOCVD. High-temperature hexagonal modification for DyMnO3, which does not exist for the bulk compounds was obtained at 900 °C due to epitaxial stabilization.[i]
[i]A. A. Bosak , C. Dubourdieu , J.-P. Sénateur , O. Yu. Gorbenko, A. R. Kaul, J. Mater. Chem., 2002, 12, 800-801, DOI: 10.1039/B110870K, « Epitaxial stabilization of hexagonal RMnO3(R = Eu–Dy) manganites »
Dy(thd)3 was applied as Dy precursor for the MOCVD growth of ferroelectric Dy-substituted Bi₄Ti₃O₁₂ (Bi4-XLnXTi₃O₁₂) layers (~200nm thick) on Pt(111)/Ti/SiO₂/Si(100) substrates. Remnant polarization (2Pr) values increased with larger Dy-substitution (as Dy has smaller ionic radius vs. Bi); better ferroelectric properties were obtained for the films composed of larger grains. As the crystallization temperature increased from 600 to 720°C, the crystallinity of the thin films improved and the average grain size increased. Well-saturated polarization-electric field (P-E) curves were obtained with an increase in annealing temperature, no significant degradation of switching charge for at least up to 1.0×10¹¹ switching cycles at a frequency of 1MHZ were observed. Thus, Dy(thd)3-doped Bi₄Ti₃O₁₂ thin films can be used as dielectric materials for ferroelectric RAM applications.[i]
[i] B.-H. Kim, D.-K. Kang, J. Kor. Ceram. Soc., vol.43 No.11, 2006.11, p.672-752, “Effects of Lanthanides-Substitution on the Ferroelectric Properties of Bismuth Titanate Thin Films Prepared by MOCVD Process”
Dy(thd)3 was applied as Dy precursor (combined with ZrCl4 as Zr source, and H2O as O source) for the growth of Dy-doped ZrO2 films on Si substrates by ALD. Although the growth rate of DyO2 by the β-diketonate/H2O ALD process is low, this process allowed to reach higher content of Dy in the layers – up to few mass %. The obtained Dy-doped ZrO2 films crystallised in tetragonal zirconia phase already as-deposited and could be grown conformally onto the 1:20 aspect ratio 3D substrates. The CV and capacitance behaviour of the capacitors (both as-deposited and annealed) that used deposited Dy-doped ZrO2 films demonstrated high permittivity of the deposited layers; the maximum concentration of electronic defects at the oxide/electrode interface was 1.8*1011 cm-2/eV-1 [i]
[i]A. Tamm, J. Kozlova, T. Arroval, L. Aarik, P. Ritslaid, H. García, H. Castán, S. Dueñas, K. Kukli, J. Aarik, Chem. Vapor Dep., 2015, vol.21, Iss.7-8-9, p.181-187, https://doi.org/10.1002/cvde.201507170, "Atomic Layer Deposition and Characterization of Dysprosium‐Doped Zirconium Oxide Thin Films"
Dy(thd)3 has been proposed as potential precursor for the ALD growth of Dy-doped HfO2 layers [i]
[i] KY Ahn, US Patent App. 12/390,920, 2009, 8, « Atomic Layer Deposition of Dy-Doped HfO2 Films as Gate Dielectrics »
Dysprosium tris(6-ethyl-2,2-dimethyl-3,5-decanedionate) Dy(EDMDD)3, together with O2 as oxidant, was applied for the growth of thin Dy2O3 cap layer (5 or 10 Å) by atomic-vapor-deposition technique (AVD) at 550°C. The S/D activation at 1035 ◦C (spike annealing)
for the deposited layers was performed.). [i]
[i] C. Adelmann, P. Lehnen, S. Van Elshocht, C. Zhao, B. Brijs,. A. Franquet, T. Conard, M. Roeckerath, J. Schubert, O. Boissière,. C. Lohe, S. De Gendt, Chem. Vapor Deposition, 2007, Vol. 13, Iss. 10, p.567–573, « Growth of Dysprosium-, Scandium-, and Hafnium-based Third Generation High-κ Dielectrics by Atomic Vapor Deposition ».
Dysprosium tris(6-ethyl-2,2-dimethyl-3,5-decanedionate) Dy(EDMDD)3, together with O2 as oxidant, was applied for the growth of thin Dy2O3 cap layer (5 or 10 Å) by atomic-vapor-deposition technique (AVD) at 550°C. The S/D activation at 1035 ◦C (spike annealing) for the deposited layers was performed.). The deposition of an ultra-thin Dy2O3 cap layer on the host dielectric allowed to modulate the effective work function (eWF) of Ni-Fully Silicided (Ni-FUSI) devices with HfSiON gate dielectrics toward the silicon conduction band-edge; the obtained eWF depended on the deposited Dy2O3 cap thickness, with 10 Å Dy2O3 cap resulting in ΔeWF ~400 meV and final eWF ~4.08 eV for NiSi-FUSI. Dielectric intermixing occurred without impacting the VT uniformity, gate leakage, mobility, and reliability; well-behaved short-channel devices ( Lg ~ 100 nm, SS ~ 70 mV/dec, and DIBL ~ 65 mV/V) were demonstrated for [HfSiON/Dy2O3 cap (5 Å)] devices with NiSi-FUSI gates. This Dy2O3 capping approach, combined with Ni-silicide FUSI phase engineering, allowed (n-p) values up to 800 meV, making it promising for low- CMOS.[i]
[i] A Veloso, HY Yu, SZ Chang… - Electron Device …, 2007 - ieeexplore.ieee.org , « Achieving Low- VT Ni-FUSI CMOS by Ultra-Thin Dy2O3 Capping of Hafnium Silicate Dielectrics »