Zinc dimethyl dithiocarbamate Zn[S2CN(CH3)2]2 has been applied as a single source precursor for the growth of crystalline ZnS films by CVD. The films had uniform columnar structure with cubic [111] orientation, accordng to TEM and XRD. The flms had less than 1 at% impurites in the bulk of the films, as determined by XPS. [311]
Zinc bis(diethyldithiocarbamate) Zn[S2CNEt2]2 has been reported to be volatile (evaporation occurs at 190°C-250°C).
If thus obtained Zn[S2CNEt2]2 is transported by N2 carried to the substrate heated to 380°C-450°C, the decomposition reaction occurs , producing ZnS film. [[i] ]
[i] Yang – PhD. 1994 , Thesis, Study of the degradation mechanisms and lifetime optimization of thin film ZnS electroluminescent devices made by MOCVD, http://scholarworks.sjsu.edu/cgi/viewcontent.cgi?article=1880&context=etd_theses