Barium PYRAZOLYLBORATES have been applied as MOCVD precursors for Ba and B -containing films
Barium(II) hydro-tri(1-pyrazolyl)borate, Ba[BH(pz)3]2 has been applied as a single-source precursor for the MOCVD growth of barium borate BaB2O4 thin films.
Ba[BH(pz)3]2 displayed reasonable volatility and good thermal stability with a low residue upon sublimation, despite the relatively high melting point (298.2 °C).
Films grown on Al2O3 (0001) substrates were characterized by XRD), SEM), and XPS. Different BaB2O4 phases have be obtained depending on deposition temperatures. [[i]]
[i] G. Malandrino, R. Lo Nigro, I. L. Fragalà, Chemical Vapor Deposition, Volume 13, Issue 11, pages 651–655, November, 2007
“An MOCVD Route to Barium Borate Thin Films from a Barium Hydro-tri(1-pyrazolyl)borate Single-Source Precursor”
http://onlinelibrary.wiley.com/doi/10.1002/cvde.200706611/abstract
Barium bis (diethyl-tris-pyrazolyl)borate Ba(TpEt2)2 in combination with water H2O, was investigated as a precursor for the ALD growth of barium borate BaB2O4 thin films at deposition temperatures 240 to 400 °C, uniform films at constant growth rate of 0.23 Å/cycle were obtained in a large ALD window 250 - 375 °C.[[i] ]
[i] Atomic Layer Deposition Growth of BaB2O4 Thin Films from an Exceptionally Thermally Stable Tris(pyrazolyl)borate-Based Precursor
Mark J. Saly, Frans Munnik, Ronald J. Baird and Charles H. Winter
Chem. Mater., 2009, 21 (16), pp 3742–3744, DOI: 10.1021/cm902030d
http://pubs.acs.org/doi/abs/10.1021/cm902030d