Triallylbismuth Bi(allyl)3 was applied for the growth of Bi2O3 and SrBiTaO films by liquid delivery MOCVD on Si(100) wafers at 300-600°C temperature and pressure 0.35-7 mbar. The deposition rate of bismuth oxide thin films was low (~10 nm/h at 0.35 mbar) and virtually independent of the temperature.[254]