Tungsten hydride (cyclopentadienyl) tris(carbonyl) WH(Cp)(CO)3 and Tungsten hydride (pentamethylcyclopentadienyl) tris(carbonyl) WH(Me5Cp)(CO)3 (and for comparison W(cod)(CO)4 and W(L)(CO)3 (L=cycloheptatriene, toluene)) have been tested as precursor for the deposition of thin tungsten carbide films by cold-wall low pressure (LP) CVD. The deposited coatings were analyzed by XRD, AES, SEM and electrical resistvity measurements. Tungsten carbide layers deposited from WH(Cp)(CO)3 and WH(Me5Cp)(CO)3 (as well as from W(cycloheptatriene)(CO)3 ) at 540°C consisted of amorphous WC incorporating graphitic C and <1 at.% O contaminant, whereas films grown from W(cod)(CO)4 and W(toluene)(CO)3 were crystalline textured WC1-x and a-W2C. [i]
[i] K.K. Lai, H.H. Lamb, Chem. Mater. 1995, 7, 12, 2284–2292, « Precursors for Organometallic Chemical Vapor Deposition of Tungsten Carbide Films », https://doi.org/10.1021/cm00060a016 , https://pubs.acs.org/doi/pdf/10.1021/cm00060a016