ZIRCONIUM DIKETIMINATES AMIDES

Fig. TGA-DSC of Zr (Me2NacNac)2(NEt2)2

Alkylamidozirconium diketiminates Zr(NR2)2(MeNacNac)2 (R = Me, Et; MeNacNac = N-methyl-4-(methylimino)pent-2-en-2-amine) were studied as precursors for MOCVD, however were considered to be not very promising. F.e., Zr(NEt2)2(MeNacNac)2 has low volatility and low thermal stability: TGA residue 30%,  Melting point 135°C, vap.press. ~0.1Torr @ 140°C (DMA)

Zr(MeNacNac)2(NMe2)2 for Zr(C,N) layers by MOCVD

The compound Zr(MeNacNac)2(NMe2)2 was tested in CVD experiments, and proved to be suitable as a MOCVD precursor for the growth of Zr(C,N) layers covered by an oxynitride/oxide layer. Surface oxidation of Zr(C,N) film was observed by XPS spectroscopy. Incorporation of oxygen into the carbonitride film occurred during the deposition process as well, as was found by XPS analysis after Ar+ sputtering. The lowest oxygen incorporation was achieved when the growth rate was at the maximum value.[[i]]

[i] PIER LUIGI FRANCESCHINI, PhD Thesis , ETH Zürich 2002, « Design and Applications of New MOCVD Precursors or Nitrogen-Containing Zirconium-Based Thin Films »

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