Bis(2,4-pentanedionato)tin(II) [Sn(acac)2], combined with [In(thd)3] and Mg(thd)2(TMEDA) as co-precursors, was applied for the growth of Mg- and Sn-doped In2O3 films MgInxSnyOz (6.0 < x < 16.0; 3.0 < y < 8.0) by low-pressure MOCVD. Cubic
In2O3 bixbyite crystal structure was retained by the MgInxSnyOz films in this compositional range. The as-grown film with a nominal composition MgIn14.3Sn6.93Oz demonstarted the highest conductivity ∼1000 S/cm;
annealing of the films in vacuum increased the conductivity to ∼2000 S/cm. The prepared MgInxSnyOz films had wider optical transmission window (from 300 to 3300 nm), and higher transmittance,
compared to commercial ITO films.[[i]]
[i] J. Ni, L. Wang, Y. Yang, H. Yan, Sh. Jin, T.J. Marks, J.R. Ireland, C.R. Kannewurf, Inorg. Chem., 2005, 44 (17), p.6071–6076, DOI: 10.1021/ic0501364, https://pubs.acs.org/doi/abs/10.1021/ic0501364, « Charge Transport and Optical Properties of MOCVD-Derived Highly Transparent and Conductive Mg- and Sn-Doped In2O3 Thin Films »
Sn(acac)2, combined with In(dpm)3, Ga(dpm)3, and Zn(dpm)2, was applied as precursor for the growth of transparent, conducting Sn-doped Zn-In-O and Ga-In-O films by MOCVD. The electrical conductivity of the Sn-doped Zn-In-O layers was as high as 2290 S/cm at 25°C with a high carrier mobility (whereas as-grown undoped Zn-In-O
layers had 1030 S/cm conductivity at 25 °C (n-type, carrier density N = 4.5 × 1020 cm−3, mobility µ = 14.3 cm2/V•s). Sn-doped Ga-In-O system exhibited
higher electrical conductivity (3280 S/cm at 25 °C) and increased carrier density, but lower mobility (compare to 700 S/cm , n-type, N = 8.1 × 1019 cm−3, µ = 55.2 cm2/V•s for the undoped Ga-In-O series). All films demonstrated broader
optical transparency windows than that of commercial ITO films. Reductive annealing at 400-425 °C H2(4%)/N2 mixture resulted in increased carrier density and higher mobility (64.6 cm2/V•s) for films without Sn doping, but lowered carrier density for
the Sn-doped films. All films with good conductivity had cubic, homogeneously doped In2O3-like crystal structures, according to XRD, TEM, micro diffraction, high-resolution X-Ray analysis. [[i]]
[i] A. Wang, N.L. Edleman, J.R. Babcock, T.J. Marks, MRS Proc., 1999, Vol.607 345 (Symposium OO–Infrared Applications of Semiconductors III), https://doi.org/10.1557/PROC-607-345, “Metal-Organic Chemical Vapor Deposition of Zn-In-Sn-O and Ga-In-Sn-O Transparent Conducting Oxide Thin Films”