Vanadium (III) methoxymethylpropanolate [V(OCMe2CH2OMe)3] (or V(mmp)3) was synthesized and characterized. V(mmp)3 has appreciable volatility at 55°C/1.5Torr.
V(mmp)3 was successfully applied as precursor for the growth of pure VO2 and V2O5 films by MOCVD. The deposited layers were characterized by XRD, RBS and Cyclic Voltammetry.[[i]]
[i] L. Crociani, G. Carta, M. Natali, V. Rigato, G. Rossetto, Chem. Vapor Dep., 2011, Vol.17, Iss.1‐3, p. 6-8 , « MOCVD of Vanadium Oxide Films with a Novel Vanadium(III) Precursor », https://doi.org/10.1002/cvde.201004291, https://onlinelibrary.wiley.com/doi/abs/10.1002/cvde.201004291