Tin tetrakis(tert-butoxide) Sn(OtBu)4 is an important precursor for MOCVD of SnO2 for gas sensors.[244] Its 1H NMR spectrum is presented in Fig. Only one signal is observed, indicating the equvalence of the four tert-butoxide ligands.
Low resistivity tantalum-doped SnO2 films were grown by MOCVD using Sn(OtBu)4 as main precursor and Ta(OEt)5 as dopant. [4]
Sn(OCH(CF3)2)4(HNMe2) has been applied as the Sn and F source for the growth of low resistivity fluorine-doped SnO2 films by low pressure CVD at substrate temperatures 200–450°C. [4]