Bis(tert-butyl)gallium dimethyldithiocarbamate (tBu)2Ga(S2CNMe2) has been applied for the growth of gallium sulfide (GaS) thin films at 375−425 °C by atmospheric pressure MOCVD. It was synthesized by the reaction of [(tBu)2Ga(μ-Cl)]2 with 1 molar equivalent of Na(S2CNR2). Pure (tBu)2Ga(S2CNMe2) was obtained by sublimation, separating it from bis-substituted (tBu)Ga(S2CNMe2)2 formed as minor product. Compound (tBu)2Ga(S2CNMe2) is air stable low melting point solid allowing its use as liquid precursors for MOCVD. The molecular structure of (tBu)2Ga(S2CNMe2) was determined by X-ray crystallography; the vaporization enthalpy (ΔHv) was obtained from thermogravimetry. Film composition Ga:S =1:1 with a low degree of impurities (C < 3%; O < 1%) was determined by wavelength dispersive spectroscopy (WDS) microprobe analysis. Gallium-rich films were grown using (tBu)2Ga(S2CNMe2) under reduced pressure. Abundance of N on the surface of GaS films was revealed by XPS studies and SIMS measurements. GaS films have a new distorted hexagonal wurtzite phase (a = 4.590 Å, c = 6.195 Å), as was determined by XRD and TEM [[i]]
[i]A.Keys, S.G.Bott, A.R.Barron*, Chem.Mater., 1999, 11(12), p.3578–3587, DOI:10.1021/cm9903632