Nickel bis(2-imino-penten-4-trifluoroacetylacetonate) Ni(ktfaa)2, a ketoiminate chelate, was synthesized, characterized and its pyrolysis mechanisms in He and reduction in H2 studied.
Ni(ktfaa)2 was applied as precursor for the Ni film deposition on Cu substrates. The pyrolysis of Ni(ktfaa)2 in He in the MOCVD conditions was found to occur at temperatures
>300 °C; whereas H2 atmosphere allowed to decrease deposition temperature to 213 °C, but the film deposition rate was low. The produced Ni layers were continuous; 300 °C was found to be the optimal temperature for the growth
of continuous Ni layers on Cu substrates. The mechanism of interaction of the adsorbed Ni(ktfaa)2 with H2 was discussed.[i]
[i] V. V. Bakovets, V. N. Mitkin, N. V. Gelfond, Chem. Vapor Dep., 2005, Vol.11, Iss.2, p.112–117, « Mechanism of Ni Film CVD with a Ni(ktfaa)2 Precursor on a Copper Substrate »