Tert-amylindium selenide [(Me2EtC)In(µ3-Se)]4 contains cubic In4Se4 core in the structure.
InSe films were grown using this precursor by low pressure MOCVD at temperatures 260-350°C, the films where stoichiometric according to EDX. The deposition temperature was significantly influencing film morphology: ball-like morphologies at low growth temperatures <330 °C, and highly crystalline textured films at higher temperatures 350−370 °C (according to TEM) [4] [518]
Tert-butylindium selenide [(Me2EtC)In(µ3-Se)]4 resulted in the growth of In metal films by LP CVD at 320-420°C deposition temerature. [518]