Chromium (III) diethyldithiocarbamate Cr(S2CNEt2)3
Cr2S3 films were prepared by CVD in a low-pressure flow reactor at 450 °C substrate temperature onto Pyrex, molybdenum or aluminium substrates using Cr(S2CNEt2)3 as the single-source precursor (precursor evaporation temperature was 255°C). Films were grown in the rhombohedral or trigonal modifications according to EDX and glancing angle XRD, growth rates up to 10 µm/h were achieved. [983]
The related binuclear chromium complexes – anhydrous forms of [Cr2O2S2(L)2(H2O)2] (L=diethyldithiocarbamate(I), and piperidinyldithiocarbamate(II)) are volatile and therefore are potential precursors for the CVD preparation of Cr-O-S containing films. They sublime at temperatures 176 and 180 °C leaving low end residue 5.03% and 4.75%, respectively. The least square expression corresponding to the vapor pressure data was found to be log(p/Pa) = 10.36(± 0.100) − 4229(± 450) / T(K) and log(p/Pa) = 3.91(± 0.04) − 1474(± 120) / T(K) for I and II, respectively. The standard enthalpy of sublimation ΔHsub0 derived from the slopes of the vapor pressure equations are 80.97(± 2.14) (I) and 28.22(± 1.06) kJ/mol (II). [[i]]
[i] S. Pokhrel, K.S. Nagaraja, Materials Letters, Volume 60, Issue 5, March 2006, Pages 621-625