Lithium-tantalum hexakis(n-butoxide) LiTa(OnBu)6 was applied
as single molecular precursor for the growth of epitaxial LiTaO3 films on single crystal sapphire substrates by low pressure MOCVD. The deposition mechanism was assumed to occur by vapor phase hydrolysis-polycondensation reactions in the MOCVD reactor. High
epitaxial quality of the deposited LiTaO3 film was determined by rocking curve of grown on sapphire (0006).[[i]]
[i] Kueir-Weei Chour & Ren Xu, Integrated Ferroelectrics: An International Journal, 1995, Vol 7, Iss. 1-4, p. 85-92, DOI: 10.1080/10584589508220223, « Deposition of LiTaO3 thin films on single crystal substrates by vapor phase hydrolysis of volatile LiTa(OC4H9)6 precursor », http://www.tandfonline.com/doi/abs/10.1080/10584589508220223#.VDRx5FePK8E
Lithium tantalum hexakis(tert-butoxide) LiTa(OtBu)6 was applied as single source precursor for the growth of epitaxial LiTaO3 thin films on (0001)
sapphire by low pressure MOCVD. LiTaO3 layers having c axis normal to the sapphire surface were grown, according to XRD, and the layers were also in-plane oriented, with sapphire [101¯0] parallel to LiTaO3 [101¯0], as per X-ray pole figure and XTEM diffraction analysis.
The refractive index of the layers was close to the LiTaO3 bulk values over a wide wavelength range. [[i]]
[i] H. Xie, R. Raj; Appl. Physics Lett., 1993, vol. 63 Iss. 23, p.3146 – 3148, “Epitaxial LiTaO3 thin film by pulsed metalorganic chemical vapor deposition from a single precursor”