GaMe2((SePiPr2)2N) was applied as precursor to grow Ga2Se3 films with both aerosol-assisted CVD and low pressure MOCVD. Deposited layers consisted of cubic Ga2Se3, according to X-ray powder diffraction.[[i]]
[i] Jin-Ho Park, Mohammad Afzaal, Madeleine Helliwell, Mohmmad A. Malik, Paul O'Brien,* and Jim Raftery, Chem. Mater., 2003, 15 (22), pp 4205–4210, “Chemical Vapor Deposition of Indium Selenide and Gallium Selenide Thin Films from Mixed Alkyl/Dialkylselenophosphorylamides”