Aluminum tris(ethoxide) Al(OEt)3
Aluminum tris(ethoxide) Al(OEt)3 has been applied as precursor for the ALD deposition of Al2O3[4]
Aluminum tris(isopropoxide) Al(OiPr)3
Aluminum tris(isopropoxide) Al(OiPr)3 was used as precursor for the growth of Al2O3 layers by ALD [4]
Al(OsBu)3, combined with TiCl4 as Ti precursor and CO2/H2 as oxygen source, was applied as Al precursor for the deposition of aluminium titanate AlTiOx by CVD. [i]
[i] D.-H. Kuo, Ch.-N. Shueh, Journal of Vacuum Science & Technology A 22, 151 (2004); « Growth of chemical vapor deposition aluminum titanate films at different CO 2 /H 2 and aluminum butoxide inputs « , https://doi.org/10.1116/1.1632918, https://avs.scitation.org/doi/abs/10.1116/1.1632918