Cobalt silyl carbonyl, Co(SiH3)(CO)4 , was synthesized and applied for the growth of thin films of cobalt silicide CoSix in the pores of porous silicon layers by Chemical Vapour Infiltration and Decomposition (CVID) technique. [[i]]
[i]B.J. Aylett, L.G. Earwaker, J.M. Keen, MRS Proceedings/Volume 282/1992, DOI: http://dx.doi.org/10.1557/PROC-282-281, “Metallisation and Silicidation of Porous Silicon”