Gallium tris(methyl-n-hexyl-dithiocarbamate) Ga(MenHexNCS2)3, in combination with Cu(NMenHexCS2)2 as copper precursor, was applied for the growth of thin films of chalcopyrite CuGaS2 by low-pressure MOCVD or aerosol-assisted CVD at 350–500 °C temperatures.[481, 1095]