Dibutyltindiacetate Sn(nBu)2(OAc)2 dissolved in acetylacetone as solvent was applied as precursor for the preparation of of
SnO2 or Pd-doped SnO2 films (with Pd(acac)2 (3 mol.%) as co-precursor) by spray pyrolysis (aerosol CVD) on Si3N4 substrates at 460–540°C temperatures. Polycrystalline SnO2(Pd) thin films (0.25–1.75 μm) were obtained; the gas sensitivity
(S=(Ggas−Gair)/Gair) of the layers in the steady-state and in a dynamic regime was evaluated as a function of temperature under EtOH (100 ppm in air), CO (300 ppm in air), and CH4 (1000 ppm in air). The SnO2(Pd) films prepared at lower temperature (460–500°C)
were the most sensitive to CO, due to their smaller crystallite size and higher resistivity. Sensitivities up to 4500 were obtained for the thinnest films in the steady-state at low working temperature of 100°C. A cross-sensitivity to EtOH and CH4 was
observed. Sensitivity to CO of Pd-doped SnO2 thin films increased 2 to 10 times after annealing under pure air (which stabilised the microstructure and increases the resistivity in air).[[i]]
[i] D. Briand, M. Labeau, J.F. Currie, G. Delabouglise, Sens. Actuators B: Chemical, 1998, vol.48, Iss.1–3, p.395–402, DOI: 10.1016/S0925-4005(98)00102-6, "Pd-doped SnO2 thin films deposited by assisted ultrasonic spraying CVD for gas sensing: selectivity and effect of annealing", http://www.sciencedirect.com/science/article/pii/S0925400598001026
Tributyltin trifluoracetate Sn(nBu)3(CF3COO), with H2S as sulfur source, has been used for the growth of SnS films at 350–600°C by atmospheric CVD. [4]