Dimethylaluminum methoxide [AlMe2(OMe)]3 (DMALMO) is solid at room temperature. It has trimeric molecular structure.
Dimethylaluminum methoxide [AlMe2(OMe)]3 (DMALMO) was applied for intentional oxygen doping of GaAs epilayers grown by MOVPE, the O-related photoluminescence (PL) emissions at 1.08, 0.95, 0.81, and 0.62 eV were detected by infrared PL measurements. The 0.81 eV emission was attributed to the transition from the conduction band to the Al–O–Ga center, whereas 0.62 eV emission was tentatively attributed to the Al–O–Al centers.[i]
[i] P. W. Yu, Y. Park, M. Skowronski, Michael L. Timmons, J. Appl. Phys. 78, 2015 (1995); « Deep‐center oxygen‐related photoluminescence in GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy », http://dx.doi.org/10.1063/1.360177
Dimethylaluminum methoxide AlMe2(OMe) was applied for intentional O doping (≳1017 cm−3) of GaAs and Al0.30Ga0.70As epitaxial layers grown by MOVPE. The incorporation of O and very low levels of Al (<0.5 mol.% Al) in the GaAs
layers lead to the compensation of intentionally introduced Si donors and produced deep levels in GaAs. The crystallinity and Al fraction of the ternary AlxGa1−xAs layers was not influenced by the addition of AlMe2(OMe), but incorporated high levels
of oxygen compensating Si donors. Thus, O-compensated high resistivity GaAs and Al0.30Ga0.70As buffer layers can be grown by oxygen doping during MOVPE.[i]
[i] M. S. Goorsky, T. F. Kuech, F. Cardone, P. M. Mooney, G. J. Scilla, R. M. Potemski, Appl. Phys. Lett., 1991, 58, p.1979; « Characterization of epitaxial GaAs and AlxGa1−xAs layers doped with oxygen », http://dx.doi.org/10.1063/1.105038, http://scitation.aip.org/content/aip/journal/apl/58/18/10.1063/1.105038
Dimethylaluminum isopropoxide AlMe2(OiPr)
Dimethylaluminum isopropoxide AlMe2(OiPr) has been applied as a precursor for the growth of Al-Cu-O films by MOCVD[4]
Triethyl tri(isopropoxy) dialuminum Al2Et3(OiPr)3
Al2Et3(OiPr)3 is a non-pyroforic liquid aluminum precursor that can be distilled at 190 °C/ 30 Torr. It has been applied for the growth of amorphous Al2O3 layers by CVD at 400°C, the prepared films were excellent barriers for the diffusion of Na out of soda-lime glass used as substrates. [354]