Gallium hydrazides are potentially useful as single source precursors for the epitaxial growth of semi-conducting GaN films. [[i]] (see also Aluminum Hydrazides for reference)
[i] W. Uhl W., Structure and Bonding, 2003, vol 105, « Aluminum and Gallium Hydrazides », In: Roesky H.W., Atwood D.A. (eds) Group 13 Chemistry III. Springer, Berlin, Heidelberg, https://doi.org/10.1007/3-540-46110-8_2, https://link.springer.com/chapter/10.1007/3-540-46110-8_2