Dimethylgallium hexafluoroacetylacetonate Me2Ga(hfac) has been tested as gallium precursor for the deposition of ZnO:Ga doped films by injection MOCVD. Me2Ga(hfac) solution in anhydrous heptane (0.012 mol %, in combination with 0.289 mol % diethylzinc TEEDA adduct solution (TEEDA=N,N,N′,N′-tetraethylethylenediamine), was used for the growth of ZnO:Ga films on 1.1 mm borosilicate float glass (other conditions: 12 slm N2 carrier gas, primary feed tube 160°C, in the secondary feed tube, a gas mixture of 13.8 mol % H2O in 3 slm N2 was supplied at a temperature of 160° C. The substrate was heated on a resistively heated nickel block set at 675° C; the substrate temperature was 650° C measured by an infrared pyrometer. The deposited Ga-doped ZnO films had a thickness of 566 nm; the Hall resistivity for this film averaged 4.5 e-4 ohm-cm, the mobility 15.0 cm 2 /(Vs), and the electron concentration 9.22 e20 cm −3 . [[i]]
[i]J.L. Stricker, USPatent Application 20080057225
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