Gallium tris(isopropylthiolate) [Ga(SiPr)2(μ-SiPr)]2 is a thermally stable solid with a low melting point.
[Ga(SiPr)2(μ-SiPr)]2 was used as a single-source precursor to deposit Ga2S3 films by low-pressure CVD process at substrate temperatures 350−610 °C. The films have Ga2S3 stoichiometry according to RBS and EDX. XRD revealed γ-Ga2S3 phase on glass, α-Ga2S3 on Si, and highly oriented γ-Ga2S3 on YSZ (111) substrate [474]