Nickel bis(1-dimethylamino-2-methyl-2-butanolate) Ni[OCMeEtCH2NMe2]2 (Ni(dmamb)2) is volatile liquid nickel compound. Due to its volatility and liquid state at RT, Ni(dmamb)2 is promising as precursor for the growth of Ni-containing layers by MOCVD and ALD.
Ni(dmamb)2 was employed as precursor for the growth of nickel oxide NiO films on Si and Pt/SiO2/Si
substrates at 230–410°C temperatures by cold-wall low-pressure MOCVD. The Pt/NiO/Pt capacitor structures were prepared and their resistance switching properties were investigated. The deposited NiO films were characterized by SEM; they were polycrystalline
with predominant NiO(111) peak by XRD, and were almost stoichiometric (Ni:O ratio=1.1:0.9), without negligible C impurity by XPS. The I–V measurements of NiO films grown using (Ni(dmamb)2) revealed an interesting switching behaviour of the NiO films
having low and high resistance states, suggesting their applicability as ReRAM devices.[i]
[i] K.-C. Min, M. Kim, Y.-H. You, S.S. Lee, Y.K. Lee, T.-M. Chung, C.G. Kim, J.-H. Hwang, K.-S. An, N.-S. Lee, Y. Kim, Surf. Coat. Tech., 2007, Vol. 201, Iss. 22–23, p.9252-9255, « NiO thin films by MOCVD of Ni(dmamb)2 and their resistance switching phenomena », doi.org/10.1016/j.surfcoat.2007.04.120, https://www.sciencedirect.com/science/article/abs/pii/S0257897207004926