Azido[bis(3‐dimethylamino)propyl]indium In[(CH2)3NMe2]2(N3) with NH3 as co-reactant has been applied
for the growth of amorphous, polycrystalline, or epitaxial InN, on (0001) Al2O3 substrates by low‐pressure CVD at substrate temperature 400 °C to 1100 °C. Thermal
stability and thermally induced effusion of H, hydrocarbon, and N-H from InN films was studied. The dependence of elemental composition on the growth temperature was investigated by elastic recoil detection analysis (ERDA). The concentration of surface adsorbed
hydrocarbons and carbon oxides and their influence of growth rate and crystallite size was studied by a combination of ERDA and thermal desorption measurements. The stability and the N flux from the InN surfaces was studied by XRD and thermal decomposition
experiments. [[i]]
[i]Ambacher, O., Brandt, M. S. ; Dimitrov, R. ; Metzger, T. ; Stutzmann, M. ; Fischer, R. A. ; Miehr, A. ; Bergmaier, A. ; Dollinger, G. , J. Vac. Sci. & Technology B: Microelectronics and Nanometer Structures, 1996, volume: 14 , Issue: 6, Page(s): 3532 - 3542 Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition