Gallium dichloride-azide GaCl2(N3)
Gallium dichloride-azide GaC12(N3) is a completely inorganic precursor used for the ultra-high-vacuum CVD growth of crystalline GaN with nearly perfect GaN stoichiometry on Si(100) substrates at low deposition temperature of 550-700°C at high growth rates of 70-500 Ǻ per minute. Cross-sectional electron microscopy of the highly conformal films showed columnar growth of wurtzite GaN while Auger and RBS oxygen-and carbon-resonance spectroscopies showed that the films were pure and highly homogeneous. []