Antimony tris(ethoxide) Sb(OEt)3 was applied as antimony precursor for the growth of thin layers of Sb6O13 by MOCVD at 600°C temperature. The growth process of Sb6O13 films was enhanced by the O2 addition.[[i]]
[i] P. W. Haycock, G. A. Horley, K. C. Molloy, C. P. Myers, S. A. Rushworth, L. M. Smith , « MOCVD of antimony oxides for gas sensor applications », J. Phys. IV France 11 (2001) Pr3-1045-Pr3-1050, DOI: 10.1051/jp4:20013131, Thirteenth European Conference on Chemical Vapor Deposition
Antimony tris(n-butoxide) Sb(OnBu)3 was used as single-source (Sb,O) precursor for the growth of Sb2O3 (senarmonite) thin films by MOCVD at 500 - 550°C temperatures
without addition of a separate oxygen source. The prepared senarmontite films had very high electrical resistance during preliminary gas sensor trials; they exhibited a rapid response to methane CH4 and full recovery after CH4 was removed. [[i]]
[i] P. W. Haycock, G. A. Horley, K. C. Molloy, C. P. Myers, S. A. Rushworth, L. M. Smith , « MOCVD of antimony oxides for gas sensor applications », J. Phys. IV France 11 (2001) Pr3-1045-Pr3-1050, DOI: 10.1051/jp4:20013131, Thirteenth European Conference on Chemical Vapor Deposition