Alkylcyclopentadienyl zirconium tris(alkylamide) complexes (CpMe)Zr(NMe2)3, (CpEt)Zr(NMe2)3 , using ozone O3 as the oxygen source, were used as precursors for the preparation
of high-quality dense insulating ZrO2 layers by ALD on semiconductor or metallic substrates. Highly conformal (good step-coverage) ZrO2 layers were obtained on three-dimensional substrates.[[i][PS1] ]
[i] A. Tamm, URI: http://hdl.handle.net/10062/15838, 2010-10-26, “Atomic layer deposition of high-permittivity insulators from cyclopentadienyl-based precursors"