Triethyllead tert-butoxide PbEt3(OtBu) (TELBUT) was applied as a new precursor for the growth of metallice lead Pb, lead titanate PbTiO3 and lead zirconate titanate (PZT) thin films by MOCVD (using Ti(OtBu)4 and Zr(OtBu)4 as Ti and Zr sources).
PbEt3(OtBu) is thermally stable compound, however was found to decompose on the exposure of the daylight, with photolysis products differing for pure compound and dissolved in the solution of d6-toluene; when studying its thermal properties by DSC, PbEt3(OtBu) was starting to decompose exothermically at 138°C producing metallic Pb.
MOCVD experiments without adding O2 as oxidant, resulted in the deposition of metallic lead films. When Ti(OiPr)4 was added, without additional O2, only a mixture of Pb and TiO2 was deposited. However, in the presence of oxygen, lead titanate PbTiO3 films were grown at temperature 500-700°C.
Using PbEt3(OtBu) combined with Ti(OtBu)4 and Zr(OtBu)4, ferroelectric lead zirconate titanate
PbZrxTi1-xO3 (PZT) layers having good crystallinity and high polarization values were grown at 700°C in the presence of oxygen. [[i]]
[i] G. J. M. Dormans, M. de Keijser, P. J. van Veldhoven, D. M. Frigo, J. E. Holewijn, G. P. M. van Mier, C. J. Smit, Chem. Mater., 1993, 5 (4), pp 448–451, DOI: 10.1021/cm00028a009, « Triethyllead tert-butoxide, a new precursor for organometallic chemical vapor deposition of lead zirconate titanate thin film »
Lead triethyl neopentoxide PbEt3(ONep) (TEPOL) was applied as a new Pb precursor for the growth of PbO, PbTiO3 and PZT thin films by MOCVD. The main reaction for the
growth of the PbO thin films was oxidation of TEPOL precursor. At substrate temperatures >525°C PbTiO3 thin films with dielectric constants 50-200 were grown. at Substrate temperatures >470°C and >500°C were necessary for the growth of
tetragonal and rhombohedral PZT thin films (50°C and 40°C lower than with PbEt4 as Pb precursor). The deposited PZT films showed good dielectric and ferroelectric properties (dielectric constants 190 -1000,
remnant polarization 15–20 μC/cm2 and coercive field 70–90 kV/cm). [[i]]
[i] M. Shtmizu, M. Sugiyama , H. Fujisawa, T. Shiosaiu, Integr. Ferroelectrics , An International Journal , Vol 6, 1995, Issue 1-4, p. 155-164, « Preparation of PZT thin films by MOCVD using a new Pb precursor », https://doi.org/10.1080/10584589508019361