Tetrakis(dimethylamido)tin Sn(NMe2)4 , in combination with ammonia, was used for the MOCVD growth of films of tin nitride Sn3N4 at temperatures <200°C [4]
Tetrakis(diethylamido)tin Sn(NEt2)4is liquid at room temperature.
It was applied as precursor for the growth of thin films of Sn3N4 by CVD at substrate temperatures 200-400°C, using ammonia as nitrogen source [43]