Trihafnium oxo dekakis(neopentoxide) (“hafnium oxoneopentoxide”) Hf3O(ONep)10 was synthesized by the reaction of HfCl4 and neopentyl alcohol (NepOH) in the presence of NH3 and characterized by FT-IR, 1H and 13C NMR spectroscopy, its molecular structure, as determined by single-crystal X-ray diffraction, contains one µ-oxo ligand, one µ3-neopentoxide, three µ-bridging neopentoxide and six terminal nepentoxide ligands: Hf3(μ3-O)(μ3-ONep)(μ-ONep)3(ONep)6
“Hafnium oxoneopentoxide” was applied as precursor for the growth of HfO2 films by pulsed liquid injection MOCVD on sapphire (R-plane) substrates at deposition temperature 320–750°C. The temperature dependence on film growth rate, roughness and microstructure was studied and compared with conventional Hf(thd)4 precursor. Amorphous, polycrystalline or epitaxial HfO2 films were obtained depending on the deposition temperature; growth rate was independent of the deposition temperature in the range 350–750°C. [[i]]
[i] Abrutis, L.G Hubert-Pfalzgraf, S.V Pasko, A Bartasyte, F Weiss, V Janickis, Journal of Crystal Growth, Volume 267, Issues 3–4, 1 July 2004, Pages 529-537, https://doi.org/10.1016/j.jcrysgro.2004.04.012
Hafnium oxoneopentoxide as a new MOCVD precursor for hafnium oxide films