Hafnium diethylhydroxylamide [Hf(ONEt2)4], and for comparison amide [Hf(NMe2)4] , have been applied as precursors for the growth of thin HfO2 by liquid-injection MOCVD. It was determined however, that [Hf(NMe2)4] deposits oxide at lower growth temperature and over a wider temperature range, compared to [Hf(ONEt2)4] precursor. Residual C and N impurities were found in the layers, with amount depending on the precursor. HfO2 films grown from both [Hf(ONEt2)4] and [Hf(NMe2)4] had predominantly thermodynamically stable monoclinic phase, according to XRD analysis. Films grown from [Hf(ONEt2)4] were smoother with little evidence of columnar structure, while layers deposited from [Hf(NMe2)4] had a well-defined columnar crystalline structure, according to SEM., The dielectric properties of [Al/HfO2/n-Si(100)] MOS capacitors, prepared using each precursor were reported. [[i]]
[i] P.A. Williams, A.C. Jones, N.L. Tobin, P.R. Chalker, S. Taylor, P.A. Marshall, J.F. Bickley, L.M. Smith, H.O. Davies, G.W. Critchlow, Chemical Vapor Deposition, Vol. 9, Issue 6, pages 309–314, December, 2003; DOI: 10.1002/cvde.200306271, “MOCVD Using Alkylamide and Hydroxylamide Precursors”