Gallium bis(tert-butyl) tert-butylsulfide dimer [Ga(tBu)2StBu]2 has been applied as single-source precursor for the growth of gallium (II) sulfide GaS thin films by atmospheric pressure metal-organic chemical vapor deposition (AAMOCVD) at 380-420-degrees-C. The deposited layers had chemical composition Ga:S(1:1), according to XPS, RBS and EDX. GaS films grown using [(tBu)2Ga(StBu)]2 possessed thermodynamically stable hexagonal phase of GaS. [[i]]
[i]Chem. Mater., 1993, 3, p.1344-1351 , DOI: 10.1021/cm00033a027 , Andrew N. MacInnes, Michael B. Power, Andrew R. Barron Chemical vapor deposition of gallium sulfide: Phase control by molecular design
In contrast, GaS films deposited by thermal CVD using gallium cluster [(t‐Bu)GaS]4 as a single-source MOCVD precursor, retained the cubane core of the precursor is retained in the deposited film producing a cubic phase. Strong enhancement of photoluminescence intensity (two order of magnitude) has been observed for GaAs surfaces coated with CVD-cotated GaS , as compared to untreated GaAs. The increase in photoluminescence intensity was explained by effective reduction in surface recombination velocity and/or band bending. GaAs films were characterized by XRD, XPS, RBS and TEM. [[i] ]
[i]A.N. MacInnes, M.B. Power, A.R. Barron, Jenkins, Phillip P.; Hepp, Aloysius F.;
Applied Physics Letters, Issue Date: Feb 1993, Volume: 62 Issue:7, On page(s): 711 - 713