Pentamethylcyclopentadienylindium (I) In(C5Me5) has vapor pressure 1.8 Torr at 40°C.
Pentamethylcyclopentadienylindium (I) In(C5Me5) has been applied for the growth of InP thin films by MOCVD at 150-250°C, using white phosphorus P4 as phoshorus source. [4]