The novel heterometallic titanium alkoxide-trialkylstannylamides [Ti{OPri}3{N(SnMe3)2}], [Ti{OPri}3{N(SnMe3)(SiMe3)}]
and [Ti{OBut}3{N(SnMe3)2}] were synthesized, characterized and used as single-source Ti-Sn precursors (in combination with Zr(OtBu)4 for the MOCVD growth of zirconium-tin-titanate
(ZTT) films (Zr-Sn-Ti-O) on Si (1.5cm×1.5cm in size). The precursor vapor was produced in a low-pressure vapor draw (pressure ∼5
Torr) and transported by carrier gas to an O2-rich, hot-walled tube furnace (growth temperature = 430 °C), where Zr-Sn-Ti-O thin films were deposited The surface morphology of the as-deposited layers was characterized by SEM. The grown films contained
all target metals, according to the preliminary XPS: f.e., an approximate composition of Zr0.97Sn0.12Ti0.05O3.33 was determined in the ZTT layer grown from a separate vapor draw of [Ti{OBut}3{N(SnMe3)2}] and Zr(OtBu)4.[i]
[i] J.F. Eichler, O. Just, W.S. Rees, Jr., J. Mater. Chem., 2004, 14, 3139-3143, 10.1039/B406777K, « The design and synthesis of heterometallic alkoxide-amides and their application in the MOCVD of zirconium-tin-titanate (ZTT) », https://pubs.rsc.org/en/content/articlelanding/2004/jm/b406777k/unauth#!divAbstract