Dimethylindium chloride InMe2Cl was applied as indium source for the growth of InAs films and (InAs)1(GaAs)5 superlattices by metalorganic atomic layer epitaxy (MOALE) in a horizontal low-pressure MOCVD system. Monolayer unit growth was obtained at growth temperatures from 400 to 475 °C and InMe2Cl exposure times from 15 to 27 s. Self-limited InAs growth was observed at temperatures from 425 to 475 °C (the widest reported temperature range). [497]
Growth kinetics of In2O3 oxide films by MOCVD on Si and GaAs substrates was studied, using InEt2Cl and InnPr2Cl as metalorganic precursors. Thermal decomposition of dipropylindium chloride was investigated by thermal analysis. The resultant films were characterized by IR and x-ray spectroscopies and electrical measurements. [352]