TELLURIUM (IV) DIALKYLSILYLS

Bis(dimethylsilyl)tellurium (IV) Te(=SiMe2)2

Tetramethyldisilyltellurium Te(=SiMe2)2  is liquid with boiling point 50° C/ 4Torr.

Synthesis: 200 mesh Te powder and LiH (molar ratio 1:2) were mixed in THF, and the mixture was refluxed for 4 hours with stirring. The black Te powder disappeared and a muddy color precipitate was formed. After cooling the mixture to -20° C, 2 mol. eq. of  dimethylchlorosilane SiMe2HCl was added. After warming up to RT and stirring for 4 hours, the mixture was filtered under inert atmosphere, and the solvent was removed by distillation. The obtained tetramethyldisilyltellurium Te(=SiMe2)2  was purified by vacuum distillation (bp. 50° C/ 4 Torr). .[[i]]

[i] M. Xiao, L. Yang, US 8765223B2, 2009,  patents.google.com/patent/US8765223B2/en

https://patentimages.storage.googleapis.com/e7/ff/5c/30cf11bb548182/US8765223.pdf

« Binary and Ternary Metal Chalcogenide Materials and Method of Making and Using Same »

Te(=SiMe2)2 (+Ge(OMe)4) for GeTe thin films by ALD

Fig. EDX spectrum of GeTe film E grown using Te(=SiMe2)2

   Tetramethyldisilyltellurium Te(=SiMe2)2 (combined with Ge(OMe)4 as Ge source) was applied as Te precursor for the growth of GeTe thin films at 100°C by ALD on 100 nm TiN coated 4" Si (100) substrates (TiN was chosen as it is typically used for metal contacts in GST memory cells by sputtering technique). The precursors were heated before being fed into the reactor: (MeSi)Te was heated to 50° C (whereas Ge(OMe) to 30°C). The amount of the precursor fed into reactor was controlled by the pulse duration for each precursor. The ALD sequence (1000 cycles) was as follows:

(a) pulse Ge(OMe)4 for 1 second/ (b) purge the reactor with N2/ (c) pulse Te(=SiMe2)2 for 1 second/ (d) purge the reactor with N2

   The composition of the deposited GeTe film was inspected using EDX (Fig.8). Both Ge and Te were present in the film. The Ti, N and Si peaks came from the Si substrate and TiN coating, and C was due to the SEM chamber contamination.

Te(=SiMe2)2 (+Ge(OMe)4) for GST thin films by ALD

Fig. EDX spectrum of GeSbTe (GST) film grown using Te(=SiMe2)2, Ge(OMe)4, Sb(OEt)3

Tetramethyldisilyltellurium Te(=SiMe2)2 (combined with Ge(OMe)4 and Sb(OEt)3 as Ge and Sb sources), was applied as Te precursor for the growth of GeSbTe (GST) thin films at 100°C by ALD on 4" Si (100) / 100 nm TiN coated substrates. The precursors were heated before supplying them into the reactor: Te(=SiMe2)2 was heated to 50° C (whereas Ge(OMe)4 and Sb(OEt)3 to 30°C). The amount of the precursor fed into reactor was controlled by the pulse duration for each precursor. The ALD sequence (1000 cycles) was as follows: (a) pulse Sb(OEt)3 for 1 second/ (b) purge the reactor with N2/ (c) pulse Te(=SiMe2)2 for 1 second/ (d) purge the reactor with N2 / (e) pulse Ge(OMe)4 for 1 second/ (f) purge the reactor with N2/ (g) pulse Te(=SiMe2)2 for 1 sec./ (h) purge the reactor with N2

The composition of the deposited GeSbTe (GST) film was inspected by EDX (Fig.10). Te, Ge and Sb were present in the layers (The Ti, N and Si peaks came from the Si substrate and TiN coating, whereas C was due to the SEM chamber contamination)

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