Vanadium oxotrichloride VOCl3, combined with H2O as co-reactant, was applied as vanadium precursor for the growth of amorphous V2O5 thin films by CVD of at room
temperature (and for comparison by vacuum deposition); quantitative EPR measurements were used for the layer stoichiometry estimation. The transition of films from amorphous to crystalline (as determined by DTA, polarization microscopy and electrical conductivity
measurements) occurred at 453–463 K (180°C-190°C) for vacuum deposited films and 523±10 K (250°C±10°C) for films prepared by CVD. Electron microscopy and EPR were used for the monitoring of structural changes.[i]
[i] L. Michailovits, K. Bali, T. Szörényi, I. Hevesi, Acta Phys. Acad. Sci. Hung., 1980, Vol. 49, Issue 1-3, pp 217-221, « Characterization of amorphous vanadium pentoxide thin films prepared by chemical vapour deposition (CVD) and vacuum deposition », http://link.springer.com/article/10.1007/BF03158746, http://link.springer.com/article/10.1007%2FBF03158746/lookinside/000.png