Gallium complex with malonic diethylester anion [Ga(EtOCOCHOCOEt)3] has been synthesised and characterised by IR spectroscopy, 1H and 13C NMR, electron ionisation mass spectrometry (EI-MS), and single-crystal X-ray diffraction. Thermogravimetric studies revealed promising thermal properties of the complex to be suitable as MOCVD precursor.
[Ga(EtOCOCHOCOEt)3] has been applied as Ga source for the MOCVD of Ga2O3 thin films; as-deposited layers were amorphous, but by ex situ annealing at 1000 °C were transformed to the monoclinic β-Ga2O3 phase. The film composition was studied by EDX and XPS, surface morphology was investigated by SEM. It was determined that almost stoichiometric Ga2O3 thin films with low levels of C contamination were obtained. [[i] ]
[i] Malte Hellwig, Ke Xu, Davide Barreca, Alberto Gasparotto, Manuela Winter, Eugenio Tondello, Roland A. Fischer, Anjana Devi, European Journal of Inorganic Chemistry, Vol. 2009, Issue 8, pages 1110–1117, March 2009, “Novel Gallium Complexes with Malonic Diester Anions as Molecular Precursors for the MOCVD of Ga2O3 Thin Films