Zirconium amides: Zr(NMe2)4, Zr(NMeEt)4, Zr(NEt2)4, were successfully applied as precursors for ALD growth of thin films of insulating Zr3N4 at low substrate temperatures (150-250 °C). The films could be deposited with 100% step coverage in deep trenches (aspect ratio 1:40). [[i]]
[i] J. S. Becker, E. Kim, R.G. Gordon, Chem. Mater. 2004, 16, 3497-3501
Despite liquid nature of Zr(NMe2)4 at room temperature, its molecular structure in solid state was possible to be determined by single-crystal XRD. The central Zr2N8 moiety involves the fusing of two trigonal bipyramidal units along a common axial-equatorial
edge. The terminal Zr---NMe2 units have trigonal planar coordination about the nitrogen atoms [[i]]
[i] M.H. Chisholm, C.E. Hammond, J.C. Huffman, Polyhedron, 7, 2515 (1988)
The metal alkylamide complexes [Zr(NR2)4], have been shown to be promising precursors for the deposition of ZrO2 films. Thus, excellent quality zirconia films have been deposited by MOCVD from Zr(NEt2)4 precursor at 500-580°C [[i]].
[i] A. Bastianini, G.A. Battiston, R. Gerbasi, M. Porchia, S. Daolio, J. Phys. IV, (1995) 5 (C5), 525
Tetrakis-ethylmethylamidozirconium Zr(NEtMe)4 (TEMAZ) is a clear liquid that reacts immediately with water or moisture, with the release of ethylmethylamine and formation of zirconium oxide/hydroxide. Therefore handling of this precursor in perfectly dried piping and components is mandatory for high-performance, low particle processing.
TEMAZ was successfully applied for the deposition of pure ZrO2 or of zirconia mixed of other elements such as Si, Al, Hf, Ti, Ta, both in ALD or MOCVD mode, with O2, O3 and H2O as the most common co-reactants. [568 (Air Liquide)],