Potassium-niobium alkoxides like KNb(OEt)6 or KNb(OtBu)6 were proposed as potential single-source K-Nb precursors for MOCVD growth of potassium/niobium-containing layers like KNbO3.
Potassium-niobium hexakis(ethoxide) KNb(OEt)6 (M=) is compound having vapor pressure 0.8Torr/<200°C.
KNb(OEt)6 was applied as single-source K-Nb precursor for the deposition of KNbO3 thin films by MOCVD [31]
Potassium-niobium hexakis(tert-butoxide) KNb(OtBu)6 (M=) is compound having vapor pressure 0.8Torr/<200°C.
KNb(OEt)6 was applied as single-source K-Nb precursor for the deposition of KNbO3 thin films by MOCVD [31]