{Ga(μ-Te)[N(iPr2PTe)2]}
{Ga(μ-Te)[N(iPr2PTe)2]}3 has been applied as precursor for the aerosol-assisted CVD growth of Ga2Te3 on glass and Si(100) substrates at 325–475 °C growth temperatures. This precursor produced not pure Ga2Te3, but a mixture of cubic Ga2Te3, monoclinic GaTe and hexagonal Te. Black, adherent films were characterized by XRD, SEM, EDAX and Raman spectroscopy. [[i
[i] Shivram S. Garje, May C. Copsey, Mohammad Afzaal, Paul O'Brien and Tristram Chivers
J. Mater. Chem., 2006, 16, 4542-4547 Aerosol-assisted chemical vapour deposition of indium telluride thin films from {In(μ-Te)[N(iPr2PTe)2]}3